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 40TPS16PBF High Voltage Series
Vishay High Power Products
Phase Control SCR, 35 A
DESCRIPTION/FEATURES
2 (A)
TO-247AC
1 (K) (G) 3
The 40TPS16PBF High Voltage Series of silicon Pb-free controlled rectifiers are specifically designed for Available medium power switching and phase control RoHS* applications. The glass passivation technology COMPLIANT used has reliable operation up to 125 C junction temperature. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free ("PbF" suffix).
PRODUCT SUMMARY
VT at 40 A ITSM VRRM < 1.45 V 500 A 1600 V
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt dI/dt TJ 40 A, TJ = 25 C TEST CONDITIONS Sinusoidal waveform VALUES 35 A 55 1600 500 1.45 1000 100 - 40 to 125 V A V V/s A/s C UNITS
VOLTAGE RATINGS
PART NUMBER VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1700 IRRM/IDRM AT 125 C mA 10
40TPS16PBF
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94389 Revision: 06-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1
40TPS16PBF High Voltage Series
Vishay High Power Products Phase Control SCR, 35 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average on-state current Maximum continuous RMS on-state current as AC switch Maximum peak, one-cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum peak on-state voltage Maximum rate of rise of turned-on current Maximum holding current Maximum latching current Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage SYMBOL IT(AV) IT(RMS) ITSM I2t I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM dI/dt IH IL IRRM/IDRM dV/dt TJ = 25 C TJ = 125 C VR = Rated VRRM/VDRM 110 A, TJ = 25 C TJ = 25 C TJ = 125 C 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied Initial TJ = TJ maximum TEST CONDITIONS TC = 79 C, 180 conduction half sine wave VALUES 35 55 500 600 1250 1760 12 500 1.02 1.23 9.74 7.50 1.85 100 150 300 0.5 10 1000 V/s mA A2s A2s V A UNITS
m V A/s
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger SYMBOL PGM PG(AV) IGM - VGM TJ = - 40 C VGT TJ = 25 C TJ = 125 C TJ = - 40 C Maximum required DC gate current to trigger IGT TJ = 25 C TJ = 125 C TJ = 25 C, for 40TPS08A Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGD IGD TJ = 125 C, VDRM = Rated value Anode supply = 6 V resistive load TEST CONDITIONS VALUES 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 40 0.25 6 V mA mA V UNITS W A
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94389 Revision: 06-Jun-08
40TPS16PBF High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Maximum thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 125 0.6 40 0.2 6 0.21 6 (5) 12 (10) g oz. kgf * cm (lbf * in) C/W UNITS C
Mounting torque Marking device
40TPS16
Document Number: 94389 Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com 3
40TPS16PBF High Voltage Series
Vishay High Power Products Phase Control SCR, 35 A
Maximum Allowable Case Temperature (C)
40T .. S PS eries R thJC (DC) = 0.6 C/ W
Maximum Averag e On-state Power Loss (W)
130 120 110
80 70 60 50 DC 180 120 90 60 30
Conduction Angle
100 90 80 70 0
30
40 RMSLimit 30
Conduction Period
60 90 120 180
20 10 0 0 10 20 30 40 50 60 Avera ge On-sta te Current (A) 40TPS.. Series TJ = 125 C
10
20
30
40
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
130 120 110
Conduction Period
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case T emperature (C)
Peak Half S Wave On-state Current (A) ine
40T .. S PS eries RthJC (DC) = 0.6 C/ W
550 500 450 400 350 300
At Any R ted Load Condition And With a Rated V RRM Ap plied F ollowing Surge. Initia l TJ= 125C @60 Hz 0.0083 s @50 Hz 0.0100 s
100 30 90 80 70 0 10 20 30 40 50 60 Average On-state Current (A) 60 90 120 180 DC
40T .. S PS eries 250 1 10 100
Number Of Equal Amplitude Half Cycle Current Puls (N) es
Fig. 2 - Current Rating Characteristics
60 50 180 120 90 60 30
Peak Half S Wa ve On-state Current (A) ine
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Avera g e On-state Power Loss (W)
600 550 500 450 400 350 300
40 30 20 10 0 0
RMS Limit
Ma ximum Non Rep etitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage R eap p lied Rated VRRM R eap p lied
Conduction Angle
40T .. S PS eries TJ= 125C 5 10 15 20 25 30 35 40
40T .. S PS eries
250 0.01
0.1 Pulse T in Duration (s) ra
1
Avera ge On-sta te Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94389 Revision: 06-Jun-08
40TPS16PBF High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
100
Instanta neous On-s te Current (A) ta
10
TJ= 25C TJ= 125C
40T .. S PS eries 1 0.5
1
1.5
2
Instantaneous On-state Voltag e (V)
Fig. 7 - On-State Voltage Drop Characteristics
100 Instantaneous Gate Voltage (V)
10
Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s b)R ommended load line for ec <= 30% rated di/ dt: 20 V, 65 ohms tr = 1 s, tp >= 6 s
(1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms
(a) (b)
T = -40 C J T = 25 C J T = 125 C J
1 VGD IGD 0.1 0.001 0.01
(4) (3)
(2) (1)
40T .. PS 0.1 1
Frequenc y Limited by PG(AV) 10 100 1000
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
T ransient T hermal Impeda nc e Z thJC (C/W)
1
0.1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
S teady S tate Value (DC Opera tion)
S ingle Pulse 40T .. S PS eries 0.01 0.0001
0.001
0.01 S quare Wave Pulse Duration (s)
0.1
1
Fig. 9 - Thermal Impedance ZthJC Characteristics
Document Number: 94389 Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com 5
40TPS16PBF High Voltage Series
Vishay High Power Products Phase Control SCR, 35 A
ORDERING INFORMATION TABLE
Device code
40
1
1 2 3 4 5 6
T
2 -
P
3
S
4
16
5
PbF
6
Current rating (40 = 40 A) Circuit configuration: T = Thyristor Package: P = TO-247 Type of silicon: S = Standard recovery rectifier Voltage rating (16 = 1600 V) None = Standard production PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95024 http://www.vishay.com/doc?95226
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94389 Revision: 06-Jun-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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